inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2250 description collector-emitter breakdown voltage- : v (br)ceo = 140v(min) high dc current gain- : h fe = 5000( min.) @(i c = 6a, v ce = 5v) low collector saturation voltage- : v ce(sat) = 2.5v(max)@ (i c = 6a, i b = 6ma) b complement to type 2sb1490 applications designed for power amplification. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 140 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a i cm collector current-peak 12 a collector power dissipation @t a =25 3.5 p c collector power dissipation @t c =25 90 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2250 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 30ma; i b = 0 140 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 6ma b 2.5 v v be (sat) base-emitter saturation voltage i c = 6a; i b = 6ma b 3.0 v i cbo collector cutoff current v cb = 160v; i e = 0 100 a i ceo collector cutoff current v ce = 140v; i b = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 1a; v ce = 5v 2000 h fe-2 dc current gain i c = 6a; v ce = 5v 5000 30000 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 20 mhz switching times t on turn-on time 2.5 s t stg storage time 5.0 s t f fall time v cc = 50v, i c = 6a; i b1 = -i b2 = 6ma, 2.5 s ? h fe- 2 classifications q p 5000-15000 8000-30000 isc website www.iscsemi.cn 2
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